absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 12 i d @ v gs = 12v, t c = 100c continuous drain current 8.0 i dm pulsed drain current ? 48 p d @ t c = 25c max. power dissipation 25 w linear derating factor 0.2 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 350 mj i ar avalanche current ? 12 a e ar repetitive avalanche energy ? 2.5 mj dv/dt p eak diode recovery dv/dt ? 2.3 v/ns t j operating junction -55 to 150 t stg storage temperature range pckg. mounting surface temp. 300 ( for 5s) weight 0.42 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space appli- cations. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paral- leling and temperature stability of electrical param- eters. o c a radiation hardened IRHE57Z30 power mosfet surface mount(lcc-18) 07/15/02 www.irf.com 1 30v, n-channel technology product summary part number radiation level r ds(on) i d IRHE57Z30 100k rads (si) 0.07 ? 12a irhe53z30 300k rads (si) 0.07 ? 12a irhe54z30 600k rads (si) 0.07 ? 12a irhe58z30 1000k rads (si) 0.07 ? 12a for footnotes refer to the last page lcc-18 features: single event effect (see) hardened low r ds(on) low total gate charge proton tolerant simple drive requirements ease of paralleling hermetically sealed ceramic package surface mount light weight pd - 93863b
IRHE57Z30 pre-irradiation 2 www.irf.com source-drain diode ratings and characteristics parameter min typ max units test conditions i s continuous source current (body diode) ? ? 12 i sm pulse source current (body diode) ? ?? 48 v sd diode forward voltage ? ? 1.8 v t j = 25c, i s = 12a, v gs = 0v ? t rr reverse recovery time ? ? 102 ns t j = 25c, i f = 12a, di/dt 100a/ s q rr reverse recovery charge ? ? 196 nc v dd 25v ? t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units test conditions bv dss drain-to-source breakdown voltage 30 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.025 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.07 ? v gs = 12v, i d = 8.0a resistance v gs(th) gate threshold voltage 2.0 ? 4.0 v v ds = v gs , i d = 1.0ma g fs forward transconductance 8.0 ? ? s ( )v ds > 15v, i ds = 8.0a ? i dss zero gate voltage drain current ? ? 10 v ds = 24v ,v gs =0v ??25 v ds = 24v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 65 v gs =12v, i d = 12a q gs gate-to-source charge ? ? 20 nc v ds = 15v q gd gate-to-drain (?miller?) charge ? ? 10 t d (on) turn-on delay time ? ? 25 v dd = 15v, i d = 12a t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 6.1 ? c iss input capacitance ? 2184 ? v gs = 0v, v ds = 25v c oss output capacitance ? 940 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 35 ? na ? ? nh ns a measured from the center of drain pad to center of source pad note: corresponding spice and saber models are available on the g&s website. for footnotes refer to the last page thermal resistance parameter min typ max units test conditions r thjc junction-to-case ? ? 5.0 r thjpcb junction-to-pc board ? 1 9 ? solder to a copper clad pc board c/w
www.irf.com 3 pre-irradiation IRHE57Z30 table 1. electrical characteristics @ tj = 25c, post total dose irradiation ?? parameter up to 600k rads(si) 1 1000k rads (si) 2 units test conditions min max min max bv dss drain-to-source breakdown voltage 30 ? 30 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.0 1.5 4.0 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 ? -100 v gs = -20 v i dss zero gate voltage drain current ? 10 ? 25 a v ds = 24v, v gs =0v r ds(on) static drain-to-source ? ? 0.024 ? 0.042 ? v gs =12v, i d =8.0a on-state resistance (to-3) r ds(on) static drain-to-source ? ? 0.07 ? 0.088 ? v gs =12v, i d =8.0a on-state resistance (lcc-18) international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics 1. part numbers IRHE57Z30, irhe53z30 and irhe54z30 2. part number irhe58z30 fig a. single event effect, safe operating area v sd diode forward voltage ? ? 1.8 ? 1.8 v v gs = 0v, i s =12a international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. table 2. single event effect safe operating area for footnotes refer to the last page ion let energy range v ds (v) (mev/(mg/cm 2 )) (mev) (m) @v gs =0v @v gs =-5v @v gs =-10v @v gs =-15v @v gs =-20v br 37.9 255 33.4 30 30 30 25 20 i 59.4 290 28.8 25 25 20 15 10 au 80.3 313 26.5 22.5 22.5 15 10 ? 0 5 10 15 20 25 30 35 0 -5 -10 -15 -20 vgs vds br i au au
IRHE57Z30 pre-irradiation 4 www.irf.com fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 15 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 1 10 100 5 6 7 8 9 10 11 v = 15v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 12a 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v
www.irf.com 5 pre-irradiation IRHE57Z30 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 1 10 100 0 800 1600 2400 3200 4000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 40 50 60 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 12a v = 15v ds v = 24v ds 0.1 1 10 100 0.0 1.5 3.0 4.5 6.0 7.5 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 110100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , drain-to-source current (a) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on)
IRHE57Z30 pre-irradiation 6 www.irf.com fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms v ds pulse width 1 s duty factor 0.1 % r d v gs r g d.u.t. v gs + - v dd fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0 2 4 6 8 10 12 14 t , case temperature ( c) i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
www.irf.com 7 pre-irradiation IRHE57Z30 q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - 12 v fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 0 200 400 600 800 1000 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 5.4a 7.6a 12a . v gs
IRHE57Z30 pre-irradiation 8 www.irf.com ? pulse width 300 s; duty cycle 2% ? total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. ? total dose irradiation with v ds bias. 24 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. ? repetitive rating; pulse width limited by maximum junction temperature. ? v dd = 20v, starting t j = 25c, l= 4.9mh peak i l = 12a, v gs = 12v ? i sd 12a, di/dt 110a/ s, v dd 30v, t j 150c footnotes: case outline and dimensions ? lcc-18 ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 07/02
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